Samsung’s Technical Breakthrough and the Memory Race in Terminal Hardware Upgrades
Samsung's DRAM Design Innovation Boosts Yield Rate to Reclaim Market Dominance
Samsung Electronics recently optimized the design of “central wiring layer,” a core structure in DRAM, by introducing external semiconductor experts to solve previous challenges in wiring density and heat generation during process miniaturization. This has raised DRAM production yield rates to over 60%. The new design will be applied to the 6th-generation 1c DRAM and is scheduled for the earliest use in HBM4 to be produced in the second half of 2025, laying the foundation for reclaiming market share in memory.
Galaxy S26 Series Upgrades to 16GB RAM Across the Board, Driven by AI-Driven Hardware Competition
Following the Galaxy S25 Ultra’s 16GB RAM offering in only partial markets, Samsung plans to standardize 16GB RAM across the Galaxy S26 series in 2026 to meet the high memory demands of built-in AI functions. In contrast, the base model of the iPhone 17 series may still retain 8GB RAM, giving Samsung an edge in multitasking and AI performance. The booming development of generative AI is pushing terminal manufacturers to accelerate hardware specification upgrades, potentially driving sales growth in the coming quarters.