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Tongli Memory Technology

Insights and updates

The Storage Industry Sees Growing Polarization: Samsung Under Pressure Amid the HBM Boom

The storage industry has recently shown a significant trend of polarization. According to Samsung Electronics’ latest financial report, its consolidated operating profit in the second quarter was 4.6 trillion won, a sharp year-on-year drop of 55.94% and a quarter-on-quarter decrease of 31.24%, hitting the lowest level in two years. Its sales volume was 74 trillion […]

DDR4 Memory Price Fluctuations Reshape Market Landscape

Recently, the DDR4 memory market has been in a state of flux. Due to supply shortages, its prices have been steadily rising over the past few months. Earlier this year, top DRAM manufacturers such as Micron, Samsung, and SK Hynix announced that they would halt DDR4 memory production by the end of 2025. As a […]

Storage Bottlenecks in the AI Era and the Path to Technological Breakthroughs

Traditional Storage Architectures Hamper AI Development, with Power Consumption and Performance Conflicts Highlighting As demands for edge AI and data center deep learning explode, the limitations of traditional storage technologies (SRAM, LPDDR, HBM) have become increasingly evident: SRAM suffers from high leakage power and poor scalability for large discrete storage chips; LPDDR has latency and […]

DDR4’s Enduring Demand in Niche Markets

Despite the industry’s shift toward DDR5 and high-bandwidth memory, DDR4 remains a cornerstone in several niche markets due to its reliability, compatibility, and cost-effectiveness. In 2024, the global DRAM market reached $973 billion, with DDR4 accounting for 40% ($389 billion). Niche markets, particularly automotive, industrial, and networking sectors, continue to drive robust demand for DDR4, […]

Storage Bottlenecks in the AI Era and the Path to Technological Breakthroughs

Traditional Storage Architectures Hamper AI Development, with Power Consumption and Performance Conflicts Highlighting As demands for edge AI and data center deep learning explode, the limitations of traditional storage technologies (SRAM, LPDDR, HBM) have become increasingly evident: SRAM suffers from high leakage power and poor scalability for large discrete storage chips; LPDDR has latency and […]

Samsung’s Technical Breakthrough and the Memory Race in Terminal Hardware Upgrades

Samsung’s DRAM Design Innovation Boosts Yield Rate to Reclaim Market Dominance Samsung Electronics recently optimized the design of “central wiring layer,” a core structure in DRAM, by introducing external semiconductor experts to solve previous challenges in wiring density and heat generation during process miniaturization. This has raised DRAM production yield rates to over 60%. The […]